Title of article :
Removal of copper and nickel contaminants from Si surface by use of cyanide solutions
Author/Authors :
N. Fujiwara، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2004
Pages :
4
From page :
372
To page :
375
Abstract :
The cleaning method using cyanide solutions has been developed to remove heavy metals such as copper (Cu) and nickel (Ni) from Si surfaces. Immersion of Si wafers with both Cu and Ni contaminants in potassium cyanide (KCN) solutions of methanol at room temperature decreases these surface concentrations below the detection limit of total reflection X-ray fluorescence spectroscopy of 3 109 atoms/cm2. UV spectra of the KCN solutions after cleaning of the Cu-contaminated Si surface show that stable copper-cyanide complexes are formed in the solution, leading to the prevention of the re-adsorption of copper in the solutions. From the complex stability constants, it is concluded that the CuðCNÞ4 3 is the most dominant species in the KCN solutions.
Keywords :
Cleaning , copper , Silicon , Cyanide solutions , Defect passivation
Journal title :
Applied Surface Science
Serial Year :
2004
Journal title :
Applied Surface Science
Record number :
1000212
Link To Document :
بازگشت