Correlation between series resistance and parameters of Al/n-Si and Al/p-Si Schottky barrier diodes

The aim of this work is to experimentally investigate the effect of series resistance on the non-ideal silicon Schottky diode (SSD), in our process fabrication. Two types of diodes, with high resistivity silicon bulk, Al/n-Si and Al/p-Si have been prepared. The parameter RS, the ideality factor n and the barrier height fB0 are determined by performing different plots from the experimental forward bias current–voltage (I–V) and reverse bias capacitance–voltage (C–V) measurement. The high resistivity Schottky diode is currently used in nuclear detection, we tested these junctions in a particle spectrometry and measured their energy resolution