Title of article :
Effects of interfacial profiles on quantum levels in
InxGa1 xAs/GaAs graded spherical quantum dots
Author/Authors :
C.L.N. Oliveira، نويسنده , , J.A.K. Freire، نويسنده , , V.N. Freire، نويسنده , , G.A. Farias، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2004
Abstract :
theoretical scheme describing effects of interfacial profiles on the properties of confined excitons in InxGa1 xAs/GaAs
spherical quantum dots (QDs) is presented. A two parameter variational method is used to calculate the heavy-hole and lighthole
exciton energy. Our numerical results show differences in the ground state exciton energy higher than 100 meV due to
gradual rather than abrupt interfaces in a 35 A ° QD.
Keywords :
exciton , quantum dots , Gradual interfaces
Journal title :
Applied Surface Science
Journal title :
Applied Surface Science
