Characterization of HfO2/Si(0 0 1) interface with high-resolution Rutherford backscattering spectroscopy

Characterization of a HfO2 (3 nm)/Si(0 0 1) interface prepared by atomic-layer chemical vapor deposition has been performed with high-resolution Rutherford backscattering spectroscopy (HRBS). Strain depth profile in the interface region has been measured with a combination of HRBS and channeling technique. It is found that a thin interface SiOx layer lies between the HfO2 film and the Si(0 0 1) substrate, and that compressive strain in the direction perpendicular to the surface is present in the Si(0 0 1) substrate near the SiOx/Si(0 0 1) interface. The observed maximum strain is about 1% at the interface and the strained region extends down to 3 nm from the interface