Effects of adhesion layer (Ti or Zr) and Pt deposition temperature on the properties of PZT thin films deposited by RF magnetron sputtering

The effect of different bottom electrode structures (Pt/Ti/SiO2/Si and Pt/Zr/SiO2/Si) and Pt deposition temperatures on the properties of ferroelectric lead zirconate titanate (PZT) thin films deposited by RF magnetron sputtering and crystallized either in the furnace or by RTAwas investigated. The orientation of the films was strongly affected by all those parameters in the case of Ti adhesion layer, whereas for Zr only a slight effect could be detected. The best ferroelectric properties were obtained for Pt/Ti bottom electrodes with the Pt deposited at 500 8C and for Pt/Zr bottom electrodes with the Pt made at room temperature, in both cases the PZT being crystallized in the furnace. The results are explained in terms of different stress levels and diffusion processes taking place in the bottom electrode structures during their deposition and the crystallization of the PZT thin films.