Title of article
Surface structure and electronic states of sulfur-treated InP(1 1 1)A studied by LEED, AES, STM, and IPES
Author/Authors
M. Shimomura، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2005
Pages
4
From page
153
To page
156
Abstract
The structure and electronic states of an (NH4)2Sx-treated InP(1 1 1)A surface has been studied by using low-energy electron
diffraction (LEED), Auger electron spectroscopy (AES), scanning tunneling microscopy (STM), and inverse photoemission
spectroscopy (IPES). The sample annealed in ultra-high vacuum (UHV) condition at 300–400 8C showed a 2 2-LEED
pattern. Oval-shaped protrusions are observed in filled-state STM images. IPES intensity of the (2 2)-S surface at EF +1–3 eV
and +4–6 eV is decreased by the (NH4)2Sx treatment. Based on these results, a plausible structural model is discussed
Keywords
Auger electron spectroscopy , Scanning tunneling microscopy , Inverse photoemissionspectroscopy , Surface relaxation and reconstruction , Indium phosphide , Low-energy electron diffraction
Journal title
Applied Surface Science
Serial Year
2005
Journal title
Applied Surface Science
Record number
1000838
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