Title of article :
An empirical potential approach to dislocation
formation and structural stability in GaNxAs1 x
Author/Authors :
Keiichi Kawamoto*، نويسنده , , Takashi Suda، نويسنده , , Toru Akiyama، نويسنده , , Kohji Nakamura، نويسنده , , Tomonori Ito، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2005
Abstract :
We study the feasibility of our empirical potential to dislocation formation and its contribution to structural stability in
GaNxAs1 x. The feasibility is exemplified by the calculations of the dislocation core energy and core radius for various
dislocation core structures in wurtzite structured GaN. Moreover, we carry out theoretical analyses of the structural stability for
GaNxAs1 x with dislocation whose core structure is described by five- and seven-coordinated channels (5/7 core) over the entire
concentration range. The GaNxAs1 x changes its structure from zinc blende to wurtzite at the concentration for phase transition
xc = 0.3 with dislocation and xc = 0.4 without dislocation. This is because the 5/7 core favors the wurtzite structured GaNxAs1 x
with lower core energy than that in zinc blende structured GaNxAs1 x.
Keywords :
GaNxAs1 x , Dislocation , electrostatic energy , structural stability
Journal title :
Applied Surface Science
Journal title :
Applied Surface Science