Title of article
Theoretical study on hydrogen reaction processes on H/Si(0 0 1) surface
Author/Authors
N. Takahashi، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2005
Pages
5
From page
190
To page
194
Abstract
The reaction processes of an incident H atom with the H- or D-terminated Si(0 0 1)-(2 1) surface are theoretically
investigated by using first-principles molecular dynamics simulations. Because the atomic hydrogen reaction process producing
an H2 (HD) molecule is exothermic, this reaction is considered to be observed in many cases. It is found that an H2 (HD)
molecule is produced in all of the cases treated in this study. The final kinetic energy of the resultant H2 (HD) molecule is found
to be mostly distributed to the vibrational energy, whereas the translational energy of the resultant molecule is estimated to be
relatively low. In this reaction process, a resultant H2 (HD) molecule is weakly trapped into a bound state site between two Si
dimer rows on the surface followed by the desorption from the surface. This type of reaction processes corresponds to the direct
abstraction of Eley-Rideal mechanism, which is in good agreement with the previous experimental results
Keywords
Atomic hydrogen , Si surface reaction , Hydrogen termination , Exothermicity , Energy distribution , First-principles calculation
Journal title
Applied Surface Science
Serial Year
2005
Journal title
Applied Surface Science
Record number
1000847
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