A BP layer was grown on the (0 0 0 1)-surface of 6H-type hexagonal SiC substrate by atmospheric-pressure metalorganic
VPE, and crystallographic feature of the resultant BP/SiC hetero-structure was evaluated by transmission electron microscopy
(TEM) and transmission electron diffraction (TED). Analysis of the TED patterns from the hetero-structure gave the following
epitaxial relationship: (0 0 0 1),
-SiC // (1 1 1), <1 1 0>-BP. Extra diffraction spots in the TED pattern indicated the
presence of {1 1 1}-twins in the (1 1 1)-BP layer. High-resolution TEM observation also revealed the presence of random
texture which involved irregular configuration of atomic planes in the (1 1 1)-BP layer at the hetero-interface with the (0 0 0 1)-
SiC. The MOCVD-grown (1 1 1)-BP layer was deduced to develop on the (0 0 0 1)-SiC, accompanying the formation of the
(1 1 1)-twins and of the random texture at the interface with the (0 0 0 1)-SiC.