Title of article
Influence of Si3N4 and ZnS films on transmittance of InAsSb/InAsPSb heterostructures
Author/Authors
Y.Z. Gao، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2005
Pages
4
From page
297
To page
300
Abstract
The transmittance of InAsSb/InAsPSb heterostructures is remarkably improved by depositing a Si3N4 top layer. This
demonstrates its good anti-reflective property. A study of the influence of various factors on the transmittance of the
heterostructures is performed. A comparison was made between the transmittances of the heterostructures under different
conditions. The different effects of Si3N4 and ZnS top layers on the transmittance of the InAsSb/InAsPSb heterostructures are
discussed.
Keywords
InAsSb/InAsPSb , FTIR , Si3N4 , deposition , transmittance , ZnS
Journal title
Applied Surface Science
Serial Year
2005
Journal title
Applied Surface Science
Record number
1000871
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