Title of article
Zn3N2 compensated ZnTe films and ZnTe–ZnSe superlattices grown by hot wall epitaxy
Author/Authors
S. Sakakibara )، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2005
Pages
4
From page
343
To page
346
Abstract
Nitrogen-doped (N-doped) p-type ZnTe films and ZnTe–ZnSe superlattices (SLs) were prepared on GaAs (1 0 0) substrates
by hot wall epitaxy (HWE) using NH3 gas and Zn3N2 as a codoping source. We have investigated the compensation effect of
Zn3N2 and optimized the growth conditions. Then the nitrogen-doped ZnTe films and ZnTe–ZnSe superlattices of high crystal
quality with a high hole concentration were obtained
Keywords
GaAs substrate , Hot wall epitaxy , ZnTe , ZnSe , Superlattice
Journal title
Applied Surface Science
Serial Year
2005
Journal title
Applied Surface Science
Record number
1000882
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