Metal–semiconductor interfaces in CdTe crystals and modification of their properties by laser pulses

Current–voltage characteristics (CVC) have been investigated in high-resistivity CdTe(1 1 1) crystals with different electrodes (Ag, In and Au) which were deposited before different surface treatments. An influence of laser irradiation with nanosecond KrF laser pulses on the metal–CdTe interfaces, has been studied. Laser irradiation of CdTe crystals before and after electrodes deposition transformed the structure of the near surface and interface regions, respectively, and changed CVC of the barrier structures. Irradiation of CdTe crystals from the In contact side resulted in In doping. The laser-formed In/CdTe/Au diode structures had good rectification properties and showed promise for nuclear radiation detectors.