Effect of dc negative-bias and silicon introduction on performance of Si–B–N composite film by RF-PECD technique

Under action of different dc negative-bias voltages on samples incorporating with silicon, a series of Si–B–N composite films were synthesized on steel 1045 using RF-PECVD technique (radio-frequency plasma enhanced chemical vapor deposition), and the surface analysis of X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and etc. were followed. The experimental results showed: Si–B–N composite films had an obvious mixture phase of c-BN and h-BN crystal at a certain dc negative bias, and the film’s mechanical performances including micro-hardness and adhesion were improved. Moreover, bias effect on deposition performance of Si–B–N composite film has been systematically investigated, and silicon introduction was found to be necessary for the growth of Si–B–N film and the improvement of adhesion.