Epitaxial growth of tin oxide films on (0 0 1) TiO2 substrates by KrF and XeCl excimer laser annealing

Epitaxial SnO2 thin films were prepared by excimer laser annealing of amorphous SnO2 films on a (0 0 1) TiO2 substrate. The amorphous SnO2 film was prepared by a metal organic deposition (MOD) using di-n-butylbis (2,4-pentanedionate) tin at 300 8C. When using a KrF excimer laser with fluence of 50 to 150 mJ/cm2, polycrystalline SnO2 films were formed on (0 0 1) TiO2 substrate at 25 8C. At fluences of 200 and 250 mJ/cm2, (0 0 2) oriented SnO2 films were obtained. When using a XeCl laser with fluences of 150 and 200 mJ/cm2, the (0 0 2) oriented SnO2 films were obtained. Using the XRD w scanning measurement, it was found that oriented SnO2 films were epitaxially grown on the (0 0 1) TiO2 substrate. The formation of the epitaxial SnO2 on the (0 0 1) TiO2 substrate was found to depend on the pre-irradiated amorphous SnO2 film thickness, laser fluence and laser wavelength.