Title of article :
Finite elements analysis of heteroepitaxial
SiGe layers grown by excimer laser
Author/Authors :
J.C. Conde *، نويسنده , , P. Gonza´lez، نويسنده , , F. Lusquin?os، نويسنده , , S. Chiussi، نويسنده , , Pablo J. Serra، نويسنده , , B. Leo´n، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2005
Pages :
5
From page :
461
To page :
465
Abstract :
In this work, the finite elements analysis using ANSYS1 (8.0) of the heteroepitaxial SiGe alloy formation induced by
excimer lasers is presented. The numerical simulation of the temperature distribution induced by KrF excimer laser (energy
densities 0.50
Keywords :
finite elements method , Pulsed laser induced epitaxy (PLIE) , epitaxial growth
Journal title :
Applied Surface Science
Serial Year :
2005
Journal title :
Applied Surface Science
Record number :
1001254
Link To Document :
