Title of article :
Model of dopant action in oxide cathodes
Author/Authors :
Daniel den Engelsen، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2005
Abstract :
The paper describes an electrochemical model, which largely explains the formation of Ba in the oxide cathode at activation
and normal operation. In a non-doped oxide cathode electrolysis of BaO is, besides the exchange reaction from the activators in
the cathode nickel, an important source of Ba. By doping with rare earth oxides the conductivity of the oxide layer increases,
which implies that the potential difference during current drawing over the oxide layer becomes lower and electrolysis of BaO is
suppressed. This implies that the part of the electronic conductivity of the (Ba,Sr)O layer induced by the dopants also controls
the sensitivity for poisoning: the higher the dopant level, the larger the sensitivity for poisoning. Furthermore, the suppression of
electrolysis during normal operation largely explains why doped oxide cathodes have a better life performance than non-doped
cathodes. Finally a hypothesis on the enhancement of sintering upon doping is presented.
Keywords :
Doping , Semi-conductor impurity levels , Electrical conductivity , diffusion , Oxide cathode , electrolysis , poisoning
Journal title :
Applied Surface Science
Journal title :
Applied Surface Science