Title of article :
Electronic properties of the organic semiconductor hetero-interface CuPc/C60
Author/Authors :
O.V. Molodtsova *، نويسنده , , T. Schwieger، نويسنده , , M. Knupfer، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2005
Pages :
5
From page :
143
To page :
147
Abstract :
We present a study of the electronic properties of the interface between the well-established molecular organic semiconductor copper phthalocyanine (CuPc) and the fullerite C60 using photoelectron spectroscopy and the Kelvin-probe (KP) method. Upon deposition of CuPc on C60, we found interfacial shifts of the vacuum level indicating the formation of a dipole layer, while band bending is found to be negligible. The interface dipole of 0.5 eV measured with KP is close to the difference between the work functions of bulk CuPc and C60. No evidence for a chemical interaction at the interface is concluded from the absence of additional features in the core-level spectra at the earliest stages of deposition. The energy-level alignment diagram at the CuPc/C60 interface is derived
Keywords :
Organic–organic interface , Kelvin-probe method , Work function , Energy level alignment , Fullerite , Copper phthalocyanine , Photoelectron spectroscopy
Journal title :
Applied Surface Science
Serial Year :
2005
Journal title :
Applied Surface Science
Record number :
1001429
Link To Document :
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