Effects of 248 nm excimer laser irradiation on the properties of Mg-doped GaN

The effects of 248 nm KrF excimer laser irradiation on the properties of Mg-doped GaN film were investigated. The laser irradiation-induced property changes were studied by photoluminescence, I–V, C–V, DLTS, AFM measurements. It was found that under appropriate laser conditions, 248 nm KrF excimer laser irradiation could significantly increase the PL intensity of Mgdoped GaN film. The electrical properties (hole concentration and conductivity) were also improved by laser irradiation. From DLTS results, the hole-trap level appeared to have been effectively eliminated by laser treatment. The process has potential applications in the fabrication of GaN-based electronic and opto-electronic devices.