Title of article
A technique for positron spectroscopy of monovacancies formed by low-temperature ion implantation of silicon
Author/Authors
R.E. Mason، نويسنده , , P.G. Coleman *، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2006
Pages
3
From page
3228
To page
3230
Abstract
A system for positron beam-based Doppler broadening spectroscopy of the formation and evolution of monovacancy defects
in silicon is described. The apparatus allows in situ ion implantation at low temperatures ( 50 K) followed by positron beam
assay. First measurements for 6 keV He implantation, at post-implant temperatures between 60 and 300 K are presented.
Benefits and drawbacks of this system are discussed.
Keywords
Monovacancies , Ion implantation , Positron beams
Journal title
Applied Surface Science
Serial Year
2006
Journal title
Applied Surface Science
Record number
1001831
Link To Document