Abstract :
We report on the interface characterization of InGaN/GaN multiple quantum wells with indium aggregation grown by metalorganic chemical
vapor deposition. The interface related microstructure was analyzed by high-resolution transmission electron microscopy, high-resolution X-ray
diffraction and high angle annular dark field. Luminescence measurements were carried out by micro-photoluminescence measurement. In
addition, quantitative determination of the indium concentration inside the ultra-small dots was attempted.We demonstrate that the quantum dots
are coherent and the interfaces remain sharp. The In content inside 2 nm InGaN dots is about 65% determined by spectrum imaging in energyfiltered
transmission electron microscopy combined with multiple linear least squares fitting, which is slighter higher than the value obtained either
from HRTEM or theoretical calculations. This discrepancy is briefly discussed but demands further studies for complete understanding
