Title of article :
Alkali metal doping and energy level shift in organic semiconductors
Author/Authors :
Huanjun Ding، نويسنده , , Neil J. Watkins and Yongli Gao، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2006
Abstract :
We have investigated Cs and Na doping in copper phthalocyanine (CuPc) and tris(8-hydroxyquinoline) aluminum (Alq) using photoemission
spectroscopy.We observed valence and core level spectra changes at different doping levels, and found that the doping induces an energy level shift
that can be seen in two different stages. The first stage is predominantly due to the Fermi level moving in the energy gap as a result of the doping of
electrons from the alkaline metal to the organic, and the second stage is characterized by a significant modification of organic energy levels, such as
the introduction of a new gap state, new core level components and a change of binding energies. Furthermore, we observed that the energy level
shift in the first stage depends in a semi-logarithmic fashion on the doping concentration, whose slope cannot be explained by the conventional
model used in inorganic semiconductors. These results indicate that the molecular nature and strong correlation must be considered for doping in
organic semiconductors
Keywords :
Energy level shift , organic semiconductors , Doping , Interface electronic structure
Journal title :
Applied Surface Science
Journal title :
Applied Surface Science