Title of article :
Alkali metal doping and energy level shift in organic semiconductors
Author/Authors :
Huanjun Ding، نويسنده , , Neil J. Watkins and Yongli Gao، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2006
Pages :
5
From page :
3943
To page :
3947
Abstract :
We have investigated Cs and Na doping in copper phthalocyanine (CuPc) and tris(8-hydroxyquinoline) aluminum (Alq) using photoemission spectroscopy.We observed valence and core level spectra changes at different doping levels, and found that the doping induces an energy level shift that can be seen in two different stages. The first stage is predominantly due to the Fermi level moving in the energy gap as a result of the doping of electrons from the alkaline metal to the organic, and the second stage is characterized by a significant modification of organic energy levels, such as the introduction of a new gap state, new core level components and a change of binding energies. Furthermore, we observed that the energy level shift in the first stage depends in a semi-logarithmic fashion on the doping concentration, whose slope cannot be explained by the conventional model used in inorganic semiconductors. These results indicate that the molecular nature and strong correlation must be considered for doping in organic semiconductors
Keywords :
Energy level shift , organic semiconductors , Doping , Interface electronic structure
Journal title :
Applied Surface Science
Serial Year :
2006
Journal title :
Applied Surface Science
Record number :
1001930
Link To Document :
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