Preparation of boron carbon nitride thin films by radio frequency magnetron sputtering

Boron carbon nitride films were deposited by radio frequency magnetron sputtering using a composite target consisting of h- BN and graphite in an Ar–N2 gas mixture. The samples were characterized by X-ray diffraction, Fourier transform infrared spectroscopy and X-ray photoelectron spectroscopy. The results suggest that the films are atomic-level hybrids composed of B, C and N atoms. The boron carbon nitride films prepared in the present experiment have a disordered structure. The sputtering power varied from 80 Wto 130 W. This sputtering power was shown to have regular effect on the composition of boron carbon nitride films. The samples deposited at 80 Wand 130 Ware close to the stoichiometry of BC3N. The sample deposited at 110 W is close to the stoichiometry of BCN. The samples deposited at 100 Wand 120 Wapproach to BC2N. It is very significant for us to synthesize boron carbon nitride compound with controllable composition by changing the sputtering power