Title of article
The study of ion mixed amorphous carbon films on single crystal silicon by C ion implantation
Author/Authors
Zhi-Rong Sun، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2006
Pages
8
From page
4236
To page
4243
Abstract
Amorphous-carbon (a-C) films were deposited on a single-crystal silicon substrate by vacuum vapor deposition system and
these amorphous carbon films were implanted with 110 keV C+ at fluences of 1 1017 ions/cm2. The effect of ion mixing on the
surface morphology, friction behavior and adhesion strengths of amorphous carbon films was examined making use of atomic
force microscopy (AFM), ball-on-disk reciprocating friction tester, nano-indentation system and scanning electron microscope
(SEM). The changes in chemical composition and structure were investigated by using X-ray photoelectron spectroscopy (XPS).
The results show that the anti-wear life and adhesion of amorphous carbon films on the Si substrates were significantly increased
by C ion implantation. The Si–C chemical bonding across the interface plays a key role in the increase of adhesion strength and
the anti-wear life of amorphous carbon film. The friction and wear mechanisms of amorphous carbon film under dry friction
condition were also discussed.
Keywords
C+ implantation , friction and wear , single-crystal silicon , Amorphous carbon film
Journal title
Applied Surface Science
Serial Year
2006
Journal title
Applied Surface Science
Record number
1001977
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