Abstract :
Hydrogenated amorphous silicon carbon films, with relatively low hydrogen content and carbon fraction x, C/(C + Si), ranging from 0.20 to
0.57 have been deposited by RF-plasma enhanced chemical vapor deposition (PECVD) for excimer laser annealing experiments. After the laser
treatments all the films show structural modifications. It has been obtained that with increasing x the crystallinity degree of the Si phase decreases,
while that of the SiC phase increases and becomes predominant for x = 0.39. In the overstoichiometric samples only the c-SiC phase has been
observed. In all the treated samples 3C-SiC crystallites have been detected.
