Author/Authors :
B. Farkas *، نويسنده , , Zs. Geretovszky، نويسنده ,
Abstract :
Energy fluence, defined as pulse energy over irradiated area, is a key parameter of pulsed laser processing. Nevertheless, most of the authors
using this term routinely do not realize the problems related to the accurate measurement of the spot size. In the present paper we are aiming to
approach this problem by ablating crystalline Si wafers with pulses of a commercial KrF excimer laser (l = 248 nm, t = 15 ns) both in vacuum and
at ambient atmosphere. For any pulse energy, the size of the ablated area monotonously increases with increasing number of pulses. The difference
in the ablated area could be as high as a factor of three when 2000 consecutive pulses impinge on the surface. The existence and extent of the
gradual lowering of multi-pulse ablation threshold queries the applicability of routinely used procedure of dividing the pulse energy with the size of
the ablated area exposed into either carbon-paper or a piece of Si with one or a few pulses when determining the fluence. A more quantitative way is
proposed allowing comparison of results originating from different laboratories