Title of article
Light emission from silicon nanocrystals: Probing a single quantum dot
Author/Authors
I. Sychugov، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2006
Pages
5
From page
5249
To page
5253
Abstract
Analysis of low-temperature photoluminescence measurements performed on single silicon nanocrystals is presented. The luminescence
emission linewidth of Si nanocrystals is found to be less than thermal broadening at low temperature, confirming the atomic-like nature of their
energetic states. Beside the main peak the low-temperature spectra reveal a 6 meV replica, the origin of which is discussed. For some of the
investigated dots, we also observe a 60 meV transverse optical (TO) phonon replica. The regular arrangement of individual nanocrystals used in
this work enables combined high-resolution transmission electron microscopy (TEM) and low-temperature photoluminescence characterization of
the same single quantum dot.
Keywords
Silicon nanocrystal , luminescence
Journal title
Applied Surface Science
Serial Year
2006
Journal title
Applied Surface Science
Record number
1002140
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