Electrical transport characteristic of carbon nanotube after mass-separated ultra-low-energy oxygen ion beams irradiation

Mass-separated ultra-low-energy oxygen ion beams were irradiated to the single-walled carbon nanotubes (SWCNTs) under an ultra-highvacuum pressure of 10 7 Pa for the purpose of achieving n-type conduction of nanotubes. The ion beam energy was 25 eV, which was close to the displacement energy of graphite. The incident angle of the ion beam was normal to the target nanotube. The ion dose ranged from 3.3 1011 to 3.8 1012 ions/cm2. The structure of SWCNTs after the ion irradiation was investigated. The CNTs still have a clear single-walled structure after the ion irradiation. The graphite structure is distorted and some defects are induced in the nanotube by the oxygen irradiation. The oxygen ions with the ion energy of 25 eVare irradiated to the field effect transistor (FET) device with the nanotube channel. The n-type characteristic appears upon the oxygen ion irradiation, and the device exhibits ambipolar behavior. The defects induced by the ion irradiation may act as the n-type dopants.