Effect of interface traps on Debye thickness semiconductor films

The presence of the boundary interface trapping states and their role in determining the properties of Debye thickness thin semiconductor films, are demonstrated experimentally, using PbTe films deposited on mica. These charged states could not be observed earlier and be studied directly, because of the screening by the relatively high carrier density of the ordinary PbTe. Thin, Debye length thickness, PbTe films with a high concentration of interface trapping centers, possess an extraordinary high resistance. In this case the thermostimulated capacitor discharge method can be successfully applied to determine the energy of these levels, their carrier capture cross-sections and their donor- or acceptor-like character. The experimental results and theoretical calculations are discussed.