Title of article
Integrated description for random adsorption and 2D-island growth kinetics in thin film growth: Autocatalytic-reaction model and kinetic Monte Carlo simulation
Author/Authors
Hideaki Togashi، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2006
Pages
7
From page
5900
To page
5906
Abstract
Because of the interplay among various surface processes, an integrated description of 2D filmgrowth is usually a very difficult
task. As far as adsorption–migration–desorption of precursors and the resultant nucleation, growth, and coalescence of 2D islands
up to 1monolayer are concerned, however, the autocatalytic-reaction (ACR) model [Phys. Rev. Lett. 82 (1999) 2334] can be a rare
exception, which satisfactorilymodels the oxide film uptake curve during Si dry oxidation froma Langmuir to sigmoidal behaviors.
AkineticMonte Carlo (KMC) simulation, conducted to mimic the2Dgrowth of thin films, shows a similar shift froma Langmuir to
sigmoidal uptake behavior by varying the parameters corresponding to adsorption, migration, and desorption. A comparison
betweenACR andKMCclarifies that the success of theACRmodel lies in its effective inclusion of adsorption of species as well as
of nucleation, growth, and coalescence of islands.Arecipe is presented to translate theACRparameters toKMCones, which allows
one to discuss the surface morphology based on the ACR analysis on the film uptake curve
Keywords
Kinetic Monte Carlo simulation , Thin Film Growth , Autocatalytic reaction , Coalescence , Island growth , Nucleation , Si oxidation
Journal title
Applied Surface Science
Serial Year
2006
Journal title
Applied Surface Science
Record number
1002262
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