Title of article
Low-temperature MOVPE growth of ZnO thin films by using a buffer layer
Author/Authors
W.Z. Xu، نويسنده , , Z.Z. Ye*، نويسنده , , L. Jiang، نويسنده , , Y.J. Zeng، نويسنده , , L.P. Zhu، نويسنده , , B.H. Zhao، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2006
Pages
4
From page
5926
To page
5929
Abstract
ZnO thin films have been grown on a-plane (1,1, 2,0) sapphire substrates by metalorganic vapor phase epitaxy (MOVPE) at
low substrate temperature of 350 8C. It is showed that the crystal and electrical quality of the thin films was improved by using a
ZnO buffer layer. The photoluminescence (PL) measurements indicate that the ZnO thin films grown at such a low substrate
temperature have a strong UV emission.
Keywords
Zinc compounds , Metalorganic chemical vapor deposition , crystal structure , characterization
Journal title
Applied Surface Science
Serial Year
2006
Journal title
Applied Surface Science
Record number
1002265
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