Title of article
Sputtering yields of PMMA films bombarded by keV C60 + ions
Author/Authors
I.L. Bolotin، نويسنده , , S.H. Tetzler، نويسنده , , L. Hanley *، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2006
Pages
4
From page
6533
To page
6536
Abstract
A quartz crystal microbalance (QCM) has been used to determine total-mass sputtering yields of PMMA films by 1–16 keV C60
+,2+ ion beams.
Quantitative sputtering yields for PMMA are presented as mass loss per incident ion Ym. Mass-lost rate QCM data show that a 13 keV C60 cluster
leads to emission equivalent to 800 PMMA molecules per ion. The power law obtained for the increase in sputtering yield with primary ion energy
is in good agreement those predicted by ‘‘thermal spike’’ regime and MD models, when crater sizes are used to estimate sputtering.
Keywords
sputtering yield , Polymers , PMMA , Cluster , C60 , secondary ion mass spectrometry
Journal title
Applied Surface Science
Serial Year
2006
Journal title
Applied Surface Science
Record number
1002376
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