Title of article
High-intensity Si cluster ion emission from a silicon target bombarded with large Ar cluster ions
Author/Authors
Satoshi Ninomiya *، نويسنده , , Takaaki Aoki، نويسنده , , Toshio Seki، نويسنده , , Jiro Matsuo، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2006
Pages
4
From page
6550
To page
6553
Abstract
Secondary ions emitted from Si targets were measured with a quadrupole mass spectrometer under large Ar cluster and monomer ion
bombardment. Incident ion beams with energies from 7.5 to 25 keV were used and the mean size of the Ar cluster ion was about 1000 atoms/
cluster. Sin
+ ions with n values up to n = 8 were detected under Ar cluster ion bombardment, whereas Si cluster ions were scarcely detected under
Ar monomer ion bombardment. These cluster ion yields showed the power law dependence on the cluster size
Keywords
Ar cluster ion , Secondary ion , Sputtering yield , Low energy
Journal title
Applied Surface Science
Serial Year
2006
Journal title
Applied Surface Science
Record number
1002380
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