• Title of article

    High-intensity Si cluster ion emission from a silicon target bombarded with large Ar cluster ions

  • Author/Authors

    Satoshi Ninomiya *، نويسنده , , Takaaki Aoki، نويسنده , , Toshio Seki، نويسنده , , Jiro Matsuo، نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 2006
  • Pages
    4
  • From page
    6550
  • To page
    6553
  • Abstract
    Secondary ions emitted from Si targets were measured with a quadrupole mass spectrometer under large Ar cluster and monomer ion bombardment. Incident ion beams with energies from 7.5 to 25 keV were used and the mean size of the Ar cluster ion was about 1000 atoms/ cluster. Sin + ions with n values up to n = 8 were detected under Ar cluster ion bombardment, whereas Si cluster ions were scarcely detected under Ar monomer ion bombardment. These cluster ion yields showed the power law dependence on the cluster size
  • Keywords
    Ar cluster ion , Secondary ion , Sputtering yield , Low energy
  • Journal title
    Applied Surface Science
  • Serial Year
    2006
  • Journal title
    Applied Surface Science
  • Record number

    1002380