Title of article
Atomic distribution in quantum dots—A ToF-SIMS study
Author/Authors
Wen-Yin Chen، نويسنده , , Yong-Chien Ling، نويسنده , , Bo-Jung Chen، نويسنده , , Chiung-Chi Wang، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2006
Pages
3
From page
7003
To page
7005
Abstract
The atomic distribution in the monolayer of two different Mn-doped CdS quantum dots (QDs) was studied first time with ToF-SIMS. The model
Cd:Mn QDs were immobilized on Au substrate by use of a self-assembled monolayer via 1,10-decanedithiol. Morphological analysis by SPM and
TEM indicates larger particle size of in situ synthesizing CdS:Mn. ToF-SIMS depth profile and 3D-images reveal that Mn atoms reside on the
surface of in situ synthesizing CdS:Mn and are uniformly embedded in capped CdS:Mn. The results obtained by SPM, TEM, and ToF-SIMS are
comparable, indicating that ToF-SIMS might find potential applications in surface and interface study of semiconductor nanocrystals
Keywords
CDS , TOF-SIMS , depth profile , Immobilization , Image
Journal title
Applied Surface Science
Serial Year
2006
Journal title
Applied Surface Science
Record number
1002470
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