Title of article :
Atomic distribution in quantum dots—A ToF-SIMS study
Author/Authors :
Wen-Yin Chen، نويسنده , , Yong-Chien Ling، نويسنده , , Bo-Jung Chen، نويسنده , , Chiung-Chi Wang، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2006
Pages :
3
From page :
7003
To page :
7005
Abstract :
The atomic distribution in the monolayer of two different Mn-doped CdS quantum dots (QDs) was studied first time with ToF-SIMS. The model Cd:Mn QDs were immobilized on Au substrate by use of a self-assembled monolayer via 1,10-decanedithiol. Morphological analysis by SPM and TEM indicates larger particle size of in situ synthesizing CdS:Mn. ToF-SIMS depth profile and 3D-images reveal that Mn atoms reside on the surface of in situ synthesizing CdS:Mn and are uniformly embedded in capped CdS:Mn. The results obtained by SPM, TEM, and ToF-SIMS are comparable, indicating that ToF-SIMS might find potential applications in surface and interface study of semiconductor nanocrystals
Keywords :
CDS , TOF-SIMS , depth profile , Immobilization , Image
Journal title :
Applied Surface Science
Serial Year :
2006
Journal title :
Applied Surface Science
Record number :
1002470
Link To Document :
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