SIMS analysis of HfSiO(N) thin films

We have measured the N profile in HfSiON film using Cs primary ions under various conditions and observed an enhancement of the N ion signal at the surface and interface between HfSiON/Si.We have found that the enhancement is alleviated by glancing angle Cs primary ions and O2 flooding. Our backside SIMS measurements show that Hf is diffused into the Si substrate from HfSiON film during the thermal processes.