Title of article
The influence of impurity profile on ultra-shallow GaAs sidewall tunnel junction characteristics
Author/Authors
Takeo Ohno، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2006
Pages
3
From page
7283
To page
7285
Abstract
Dynamic SIMS has been applied to investigate the influence of impurity profiles on the characteristics of ultra-shallow GaAs sidewall tunnel
junctions. SIMS depth profile on test-element-group areas on the device chips have shown that the Be profiles pile-up, with concentrations of up to
1020 cm 3 at the tunnel junction interfaces. This result illustrates one of the dominant causes why very high peak current densities are achieved.
Keywords
Semiconductor , GaAs , Impurity doping , Epitaxial growth , Tunnel junction , Dynamic SIMS
Journal title
Applied Surface Science
Serial Year
2006
Journal title
Applied Surface Science
Record number
1002542
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