• Title of article

    Secondary ion measurements for oxygen cluster ion SIMS

  • Author/Authors

    Satoshi Ninomiya *، نويسنده , , Takaaki Aoki، نويسنده , , Toshio Seki، نويسنده , , Jiro Matsuo، نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 2006
  • Pages
    3
  • From page
    7290
  • To page
    7292
  • Abstract
    We have proposed to use oxygen cluster ions, which are much larger than molecular ions, as primary ions for secondary ion mass spectrometry (SIMS). A high intensity gas cluster ion source with a current density of a few mAs/cm2 has been developed. Secondary ions emitted from Si have been investigated under O2 and Ar cluster ion bombardment. A large enhancement of the yield of secondary ions produced by large O2 and Ar cluster ions was found. The SIMS system utilizing large O2 cluster ions must give both excellent depth resolution and high secondary ion yield.
  • Keywords
    Oxygen cluster ion , secondary ion mass spectrometry , Low energy , Sputtering yield
  • Journal title
    Applied Surface Science
  • Serial Year
    2006
  • Journal title
    Applied Surface Science
  • Record number

    1002544