Title of article
Secondary ion measurements for oxygen cluster ion SIMS
Author/Authors
Satoshi Ninomiya *، نويسنده , , Takaaki Aoki، نويسنده , , Toshio Seki، نويسنده , , Jiro Matsuo، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2006
Pages
3
From page
7290
To page
7292
Abstract
We have proposed to use oxygen cluster ions, which are much larger than molecular ions, as primary ions for secondary ion mass spectrometry
(SIMS). A high intensity gas cluster ion source with a current density of a few mAs/cm2 has been developed. Secondary ions emitted from Si have
been investigated under O2 and Ar cluster ion bombardment. A large enhancement of the yield of secondary ions produced by large O2 and Ar
cluster ions was found. The SIMS system utilizing large O2 cluster ions must give both excellent depth resolution and high secondary ion yield.
Keywords
Oxygen cluster ion , secondary ion mass spectrometry , Low energy , Sputtering yield
Journal title
Applied Surface Science
Serial Year
2006
Journal title
Applied Surface Science
Record number
1002544
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