Silicon surface passivation by static charge

A properly passivated silicon surface is chemically stable, and all interface properties are constant. The silicon dioxide layers fulfil the chemical stability requirements; however, their surface and interface charges have effect on the silicon surface potential barrier. Positive charge is usually assumed at the oxide–silicon interface, thus depletion or inversion layer develops in the case of p and accumulation in the case of n-type silicon. The surface of silicon dioxide can be charged macroscopically by corona charger or by conductive rubber stamp, microscopically by a tip of some scanning probe microscope (STM or AFM). The oxide surface usually retains the charges for a long time, however in the case of ultra-thin or other leaky oxide continuous charging it is necessary to keep the constant surface potential. The main purpose of this work is to summarize the possibilities of charging up the surface, the effect of the surface and interface charge on the surface properties of the silicon. The rearrangement of the surface charges will also be discussed.