Title of article :
Preparation of fluorocarbon thin film deposited by soft X-ray ablation and its electrical characteristics and thermal stability
Author/Authors :
Takeshi Kanashima، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2006
Pages :
7
From page :
7774
To page :
7780
Abstract :
Fluorocarbon films were deposited by soft X-ray ablation of polytetrafluoroethylene (PTFE) and characterized as low-dielectric-constant interlayer dielectrics. Very rapid deposition of such films at approximately 1500 nm/min could be achieved at room temperature. Fourier-transform infrared spectroscopy (FT-IR) measurement results suggest that the films deposited are primarily formed as one-dimensional chains of (–CF2–)n which are partially cross-linked. The cross-link density increases with increasing deposition temperature, which improves the thermal stability. However, the dielectric constant of the films increased abruptly above 300 C. The dielectric constant and leakage current at 1.0 MV/cm of the film deposited at room temperature were approximately 2.1 and 2:0 10 9 A/cm2, respectively
Keywords :
Fluorocarbon film , Low dielectric constant , thermal stability , Polytetrafluoroethylene , Soft X-ray ablation , Current–voltage characteristics
Journal title :
Applied Surface Science
Serial Year :
2006
Journal title :
Applied Surface Science
Record number :
1002619
Link To Document :
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