Energy level alignment between C60 and Al using ultraviolet photoelectron spectroscopy

The energy level alignment between C60 and Al has been investigated by using ultraviolet photoelectron spectroscopy. To obtain the interfacial electronic structure between C60 and Al, C60 was deposited on a clean Al substrate in a stepwise manner. The valence-band spectra were measured immediately after each step of C60 deposition without breaking the vacuum. The measured onset of the highest occupied molecular orbital energy level was located at 1.59 eV from the Fermi level of Al. The vacuum level was shifted 0.68 eV toward lower binding energy with additional C60 layers. The observed vacuum level shift means that the interface dipole exists at the interface between C60 and Al. The barrier height of electron injection from Al to C60 is 0.11 eV, which is smaller value than that of hole injection