Abstract :
We have synthesized boron carbon nitride thin films by radio frequency magnetron sputtering. The films structure and composition were
characterized by X-ray diffraction, Fourier transform infrared spectroscopy and X-ray photoelectron spectroscopy. The results indicate that the
three elements of B, C, N are chemically bonded with each other and atomic-level hybrids have been formed in the films. The boron carbon nitride
films prepared in the present experiment possess a disordered structure. The influence of PN2=PN2þAr, total pressure and substrate bias voltage on
the composition of boron carbon nitride films is investigated. The atomic fraction of C atoms increases and the fractions of B, N decrease with the
decrease of PN2=PN2þAr from 75% to 0%. There is an optimum total pressure. That is to say, the atomic fractions of B, N reach a maximum and the
fraction of C atoms reaches a minimum at the total pressure of 1.3 Pa. The boron carbon nitride films exhibit lower C content and higher B, N
contents at lower bias voltages. And the boron carbon nitride films show higher C content and lower B, N contents at higher bias voltages
