Abstract :
Ohmic contacts on n-GaN using a novel Ti/Al/ZrB2/Ti/Au metallization scheme were studied using contact resistance, scanning electron
microscopy and Auger electron spectroscopy (AES) measurements. A minimum specific contact resistivity of 3 10 6 V cm2 was achieved at an
annealing temperature of 700 8C. The lowest contact resistance was obtained for 60 s anneals. The contact resistance was essentially independent
of measurement temperature, indicating that field emission plays a dominant role in the current transport. The Ti and Al in the contact stack began
to outdiffuse to the surface at temperatures of 500 8C, while at 1000 8C the B also began to migrate to the surface. By this latter temperature, AES
showed almost complete intermixing of the metallization even though the contact morphology was still smooth. The boride appears susceptible to
getting of residual water vapor during sputter deposition
