Title of article :
Chemical characterization of gallium droplets grown by LP-MOCVD
Author/Authors :
Marc L. Imhoff، نويسنده , , O. Heintz، نويسنده , , V. Gauthier، نويسنده , , C. Marco de Lucas، نويسنده , , S. Bourgeois، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2006
Pages :
5
From page :
2820
To page :
2824
Abstract :
This study is concerned with the chemical characterization of metallic gallium droplets, obtained on silicon (1 0 0) substrates with a single growth step, by the LP-MOCVD technique with TMGa like precursor. These structures are characterized by SIMS, XPS and TEM. The analyses results lead to a structure proposition for the droplets. The core is composed of metastable metallic gallium with a non-negligible carbon quantity probably coming from incomplete precursor decomposition. The outer part, composed of gallium oxide maintains the structure stability. Covering of the substrate by a thin gallium layer of gallium compounds is observed.
Keywords :
MOCVD , SIMS , Gallium droplets , XPS , TEM
Journal title :
Applied Surface Science
Serial Year :
2006
Journal title :
Applied Surface Science
Record number :
1003255
Link To Document :
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