Author/Authors :
S. Abhaya، نويسنده , , G. Amarendra، نويسنده , ,
S. Kalavathi، نويسنده , , Padma Gopalan، نويسنده , , M. Kamruddin، نويسنده , , AK Tyagi، نويسنده , , V.S. Sastry، نويسنده , , C.S. Sundar، نويسنده ,
Abstract :
Silicide formation induced by thermal annealing in Ni/Si thin film system has been investigated using glancing incidence X-ray diffraction
(GIXRD) and Auger electron spectroscopy (AES). Silicide formation takes place at 870 K with Ni2Si, NiSi and NiSi2 phases co-existing with Ni.
Complete conversion of intermediate silicide phases to the final NiSi2 phase takes place at 1170 K. Atomic force microscopy measurements have
revealed the coalescence of pillar-like structures to ridge-like structures upon silicidation. A comparison of the experimental results in terms of the
evolution of various silicide phases is presented.
