Synthesis of GaN phase by ion implantation

GaN phase is synthesized using systemic implantation of nitrogen ions of multiple energies (290, 130 and 50 keV) into Zn-doped GaAs (1 0 0) at room temperature and subsequent annealing at 850 8C for 30 min in Ar + H2 atmosphere. The implanted doses of nitrogen ions are 5 1016 and 1 1017 ions-cm 2. Glancing angle X-ray diffraction studies show that hexagonal phase of GaN were formed. The photoluminescence studies show the emission from the band edge as well as from point defects