Author/Authors :
X.D. Gao*، نويسنده , , E.Y. Jiang، نويسنده , , H.H. Liu، نويسنده , , W.B. Mi، نويسنده , , Z.Q. Li، نويسنده , , P. Wu، نويسنده , , H.L. Bai، نويسنده ,
Abstract :
Al1 xFexN1 d thin films with 0 x 13.6% were deposited by dc magnetron co-sputtering at room temperature (RT). It is found that Fe atom
will substitutes the Al atom in the lattice when x 1.2%, while it will embed into the interstice of the lattice at larger Fe content. RT
ferromagnetism was observed in all doped samples. A maximum saturated magnetization 2.81 emu/cm3 of the film is found to be induced by
AlFeN ternary alloy when x = 1.2%.
