Title of article
Structure and RT ferromagnetism of Fe-doped AlN films
Author/Authors
X.D. Gao*، نويسنده , , E.Y. Jiang، نويسنده , , H.H. Liu، نويسنده , , W.B. Mi، نويسنده , , Z.Q. Li، نويسنده , , P. Wu، نويسنده , , H.L. Bai، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2007
Pages
5
From page
5431
To page
5435
Abstract
Al1 xFexN1 d thin films with 0 x 13.6% were deposited by dc magnetron co-sputtering at room temperature (RT). It is found that Fe atom
will substitutes the Al atom in the lattice when x 1.2%, while it will embed into the interstice of the lattice at larger Fe content. RT
ferromagnetism was observed in all doped samples. A maximum saturated magnetization 2.81 emu/cm3 of the film is found to be induced by
AlFeN ternary alloy when x = 1.2%.
Keywords
RT ferromagnetism , Fe-doped AlN film , Semiconductors–ferromagnetic
Journal title
Applied Surface Science
Serial Year
2007
Journal title
Applied Surface Science
Record number
1003669
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