Photoluminescence and Raman scattering of Cu-doped ZnO films prepared by magnetron sputtering

The Cu-doped ZnO films were prepared by direct current reactive magnetron sputtering using a zinc target with various Cu-chips attached. The influences of Cu-doping on the microstructure, photoluminescence, and Raman scattering of ZnO films were systematically investigated. The results indicate that ZnO films doped with moderate Cu dopant (2.0–4.4 at.%) can obtain wurtzite structure with strong c-axis orientation. The near band edge (NBE) emission of ZnO film can be enhanced by Cu dopant with a concentration of 2.0 at.% and quench quickly with further increase of doping concentration. Two additional modes at about 230 and 575 cm 1, which could be induced by Cu dopant, can be observed in Raman spectra of the Cu-doped ZnO films.