Abstract :
The structural and optical characteristics of porous GaN prepared by Pt-assisted electroless etching under different etching durations are
reported. The porous GaN samples were investigated by scanning electron microscopy (SEM), high-resolution X-ray diffraction (HR-XRD),
photoluminescence (PL) and Raman scattering. SEM images indicated that the density of the pores increased with the etching duration; however,
the etching duration has no significant effect on the size and shape of the pores. XRD measurements showed that the (0 0 0 2) diffraction plane peak
width of porous samples was slightly broader than the as-grown sample, and it increased with the etching duration. PL measurements revealed that
the near band edge peak of all the porous samples were red-shifted; however, the porosity-induced PL intensity enhancement was only observed in
the porous samples; apart from that, two additional strain-induced structural defect-related PL peaks observed in as-grown sample were absent in
porous samples. Raman spectra showed that the shift of E2 (high) to lower frequency was only found in samples with high density of pores. On the
contrary, the absence of two forbidden TO modes in the as-grown sample was observed in some of porous samples
