Title of article :
Electrochemically deposited photoactive CdIn2Se4 thin films: Structural and optical studies
Author/Authors :
Ju-Hyun Ahn، نويسنده , , Gangri Cai، نويسنده , , Rajaram S. Mane، نويسنده , , V.V. Todkar، نويسنده , , Arif V. Shaikh، نويسنده , , Hoeil Chung b، نويسنده , , Moon-Young Yoon b، نويسنده , , Sung-Hwan Han، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2007
Pages :
4
From page :
8588
To page :
8591
Abstract :
Electrochemical synthesis of photoactive cadmium–indium–selenide (CdIn2Se4) thin films at ambient temperature was reported. The nanocrystalline nature and 1:2:4 elemental chemical stoichiometric ratio for Cd, In and Se were obtained from the X-ray diffraction and energy dispersive X-ray analysis, respectively. Irregular shaped islands of about 400–500 nm in sizes composed of large number of small ( 30–40 nm) spherical grains were confirmed from the atomic force microscopy and the scanning electron microscopy images. The photoelectrochemical measurement of CdIn2Se4 film electrode in presence of 1 M polysulphide electrolyte revealed 0.42% photoelectrochemical device conversion efficiency, under the light illumination intensity of 80 mW/cm2.
Keywords :
photoelectrochemical cell , Electrochemical synthesis , CdIn2Se4 thin films , XRD , SEM , AFM
Journal title :
Applied Surface Science
Serial Year :
2007
Journal title :
Applied Surface Science
Record number :
1004216
Link To Document :
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