Title of article :
Modeling the effects of cohesive energy for single particle on the material removal in chemical mechanical polishing at atomic scale
Author/Authors :
Yongguang Wang، نويسنده , , Yongwu Zhao *، نويسنده , , Wei An، نويسنده , , Jun Wang، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2007
Pages :
5
From page :
9137
To page :
9141
Abstract :
This paper proposes a novel mathematical model for chemical mechanical polishing (CMP) based on interface solid physical and chemical theory in addition to energy equilibrium knowledge. And the effects of oxidation concentration and particle size on the material removal in CMP are investigated. It is shown that the mechanical energy and removal cohesive energy couple with the particle size, and being a cause of the nonlinear size-removal rate relation. Furthermore, it also shows a nonlinear dependence of removal rate on removal cohesive energy. The model predictions are in good qualitative agreement with the published experimental data. The current study provides an important starting point for delineating the micro-removal mechanism in the CMP process at atomic scale
Keywords :
Binding energy , modeling , Atomic scale , chemical mechanical polishing
Journal title :
Applied Surface Science
Serial Year :
2007
Journal title :
Applied Surface Science
Record number :
1004311
Link To Document :
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