A newly investigated approach for the control of tunnel resistance of nanogaps using field-emission-induced electromigration

We report a newly investigated approach for the control of the tunnel resistance of nanogaps using field-emission-induced electromigration (“activation”), in order to decrease the power consumption during the process. The method is demonstrated by applying a bias current to initial nanogaps using a current source. As a result, a wide range control of the tunnel resistance of the nanogaps was achieved by performing the current-source-based activation. Furthermore, the average power could be successfully suppressed in comparison with that of the voltage-source-based activation. These results indicate that the current-source-based activation is suitable for the tuning of the tunnel resistance of nanogaps.